1.5SMC130CA

Marking：120C；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■Forsurfacemountedapplicationsinordertooptimizeboardspace ■Lowprofilepackage ■Builtinstrainrelief ■Glasspassivatedjunction ■Lowinductance ■Excellentclampingcapability ■1500Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0

1SMA120A

Marking：120A；Package：SMA；SURFACE MOUNT ZENER DIODE

ZenerVoltage-3.3to200VoltsPeakPulsePower-1.0W Features ◆Forsurfacemountedapplicationsinordertooptimizeboardspace ◆Lowprofilepackage ◆Built-instrainrelief ◆Glasspassivatedjunction ◆Lowinductance ◆TypicalIRlessthan5.0μAabove11V ◆Hightemperaturesolde

1SZ1130A

Marking：120A；Package：DO-214AC；SURFACE MOUNT SILICON ZENER DIODES

Vz:3.0-300Volts,Pd:1Watts Features ●Glasspassivatedchip ●Lowleakage ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lead(Pb)-freecomponent ●Foruseinstabilizingandclipping withhighpowerrating MechanicalData ●Case:Moldedpla

3.0SMC120A

Marking：120A；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC120C

Marking：120C；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

3.0SMC120CA

Marking：120CA；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 3000Watts

FEATURES Forsurfacemountedapplicationsinordertooptimizeboard space. Lowprofilepackage. Glasspassivatedjunction. Lowinductance. 3000Wpeakpulsepowercapabilityat10x1000uswaveform, repetitionrate(dutycycles):0.01 PlasticpackagehasUnderwritersLaboratoryFlammability.

AZ1345-04F

Marking：120XY；Package：DFN2510P8E；Ultra Low Capacitance ESD Protection Array For High Speed I/O Port

Features
ESDProtectforSuperSpeedDifferential Signaling(above5Gb/s)channels
ProtectsfourI/Olines
ProvideESDprotectionforeachlineto IEC61000-4-2(ESD)±15kV(air),±10kV(contact)
Foroperatingvoltageof5Vandbelow
Ultralowcapacitance:0.35pFtypical
Fast

BSC120N12LS

Marking：120N12LS；Package：PG-TDSON-8；OptiMOSTM 2 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?150°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccordingtoIEC61249-2-

DMWSH120H90SM4Q

Marking：120H90SM4；Package：TO247-4；1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

Features ?LowOn-Resistance ?HighBVDSSRatingforPowerApplication ?LowInputCapacitance ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?TheDMWSH120H90SM4Qissuitableforautomotive applicationsrequiringspecificchangecontro

IMZ120R045M1

Marking：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features ?Verylowswitchinglosses ?Threshold-freeonstatecharacteristic ?Widegate-sourcevoltagerange ?Benchmarkgatethresholdvoltage,VGS(th)=4.5V ?0Vturn-offgatevoltage ?Fullycontrollabledv/dt ?Commutationrobustbodydiode,readyforsynchronousrectification ?Eas