DMN2300UFL4Q-7

Marking：23N；Package：X2-DFN1310-6；20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?FootprintofJust1.3mm2 ?UltraLowProfilePackage—0.4mmProfile ?OnResistance

IPT023N10NM5LF2

Marking：23N10LF2；Package：PG-HSOF-8；OptiMOS? 5 Linear FET 2, 100 V

Features ?Idealforhot?swapande?fuseapplications ?Verylowon?resistanceRDS(on) ?WidesafeoperatingareaSOA ?N?channel,normallevel ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

STP23N80K5

Marking：23N80K5；Package：TO-220；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220 package

Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh?K5 technologybasedonaninnovativeproprietary verticalstructure.Theresultisadramatic reductioninon-resistanceandultra-lowgate chargeforapplicationsrequiringsuperiorpower densityandhighe

SUD23N06

Marking：23N06；Package：TO-252；SUD23N06

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)25m(VGS=10V) RDS(ON)30m(VGS=4.5V)

SUD23N06-31

Marking：23N06；Package：TO-252；SUD23N06

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)25m(VGS=10V) RDS(ON)30m(VGS=4.5V)

SUD23N06-31

Marking：23N06；Package：TO-252；MOSFET

FEATURES VDS(V)=60V ID=30A(VGS=10V) RDS(ON)

TPS78425QDBVRQ1

Marking：23NF；Package：SOT-23；TPS784-Q1 Automotive, 300-mA, High-PSRR Low-Dropout Voltage Regulator With High Accuracy and Enable

1Features ?AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA ?Devicejunctiontemperature:–40°Cto+150°C,TJ ?Inputvoltagerange:1.65Vto6.0V ?Availableoutputvoltages: –Adjustableoption:1.2Vto5.5V –Fixedoptions:0.65Vto5.0V

STF23N80K5

Marking：23N80K5；Package：TO-220FP；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-220FP package

STL23NS3LLH7

Marking：23NS3；Package：PowerFLATTM3.3x3.3；N-channel 30 V, 0.0027 ??typ., 23 A STripFET??H7 Power MOSFET plus monolithic Schottky in a PowerFLAT??3.3 x 3.3

STW23N80K5

Marking：23N80K5；Package：TO-247；N-channel 800 V, 0.23 廓 typ., 16 A MDmesh??K5 Power MOSFET in a TO-247 package