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2N6667

DARLINGTON POWER TRANSISTORS(PNP SILICON )

DarlingtonSiliconPowerTransistors Designedforgeneral?purposeamplifierandlowspeedswitchingapplications. ?HighDCCurrentGain? hFE=3500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@200mAdc VCEO(sus)=60Vdc(Min)?2N6667

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6667

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTICMEDIUM-POWERSILICONTRANSISTORS 8AND10AMPEREDARLINGTONPOWERTRANSISTORSPNPSILICON40-80VOLTS65WATTS

bocaBoca Semiconductor Corporation

博卡博卡半導(dǎo)體公司

2N6667

NPN SILICON TRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

2N6667

PNP DARLINGTON TRANSISTOR

Description:PNPDarlingtonTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2N6667

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ?HighDCCurrentGain-:hFE=1000(Min)@IC=-5A ?Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) ?LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-5A ?ComplementtoType2N6387 APPLICATIONS ?Designedforgeneralpurposeamplifierandl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6667_05

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

DarlingtonSiliconPowerTransistors Designedforgeneral?purposeamplifierandlowspeedswitchingapplications. ?HighDCCurrentGain? hFE=3500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@200mAdc VCEO(sus)=60Vdc(Min)?2N6667 =80

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6667G

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

DarlingtonSiliconPowerTransistors Designedforgeneral?purposeamplifierandlowspeedswitchingapplications. ?HighDCCurrentGain? hFE=3500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@200mAdc VCEO(sus)=60Vdc(Min)?2N6667 =80

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

2N6668

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=1000(Min)@IC=-5A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-80V(Min) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max)@IC=-5A ·ComplementtoType2N6388 APPLICATIONS ·Designedforgener

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

2N6668

POWER TRANSISTORS(65W)

8AND10AMPEREDARLINGTONPOWERTRANSISTORSPNPSILICON40-80VOLTS65WATTS

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

2N6668

DARLINGTON POWER TRANSISTORS(PNP SILICON )

DarlingtonSiliconPowerTransistors Designedforgeneral?purposeamplifierandlowspeedswitchingapplications. ?HighDCCurrentGain? hFE=3500(Typ)@IC=4.0Adc ?Collector?EmitterSustainingVoltage?@200mAdc VCEO(sus)=60Vdc(Min)?2N6667

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

晶體管資料

  • 型號(hào):

    2N660

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Ge-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_開關(guān)管 (S)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    25V

  • 最大電流允許值:

    1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    AC128,AC153,AC188,AC193,2N1190,2SB405,3AK61,

  • 最大耗散功率:

    0.2W

  • 放大倍數(shù):

  • 圖片代號(hào):

    D-9

  • vtest:

    25

  • htest:

    999900

  • atest:

    1

  • wtest:

    0.2

詳細(xì)參數(shù)

  • 型號(hào):

    2N66

  • 功能描述:

    alloy-junction germanium transistors

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6540
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326
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72
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更多2N66供應(yīng)商 更新時(shí)間2025-4-22 13:30:00