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2SA1160

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SA1160

TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications ?HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140to600(VCE=?1V,IC=?0.5A) :hFE(2)=60(min),120(typ.)(VCE=?1V,IC=?4A) ?Lowsaturationvoltage :VCE(sat)=?0.5V(max)(IC=?2

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1160

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGainandExcellenthFELinearity ●LowSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

2SA1160

Silicon PNP transistor in a TO-92LM Plastic Package

Descriptions SiliconPNPtransistorinaTO-92LMPlasticPackage Features HighDCcurrentgainandexcellenthFElinearity,lowsaturationvoltage. Applications Strobeflash,mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

2SA1160

TRANSISTOR (PNP)

FEATURE PowerdissipationPCM:0.9W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司

2SA1161

New Jersey Semi-Conductor Products,

NewJerseySemi-ConductorProducts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2SA1162

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications ?Highvoltageandhighcurrent:VCEO=?50V,IC=?150mA(max) ?ExcellenthFElinearity:hFE(IC=?0.1mA)/hFE(IC=?2mA) =0.95(typ.) ?HighhFE:hFE=70~400 ?Lownoise:NF=1dB(typ.),

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SA1162

Marking:SG;Package:SOT-23;Silicon Epitaxial Planar Transistor

FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

2SA1162

Plastic-Encapsulated Transistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SA1162

PNP Silicon General Purpose Transistor

FEATURES ?LowNoise:NF=1dB(Typ.),10dB(Max.) ?Complementsofthe2SC2712 MECHANICALDATA ?Case:SOT-23,MoldedPlastic ?Weight:0.008grams(approx.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

晶體管資料

  • 型號(hào):

    2SA1160

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    LO_SAT

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    2A

  • 最大工作頻率:

    140MHZ

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    2SA1382,2SB927,2SB892,2SB985,3CA4A,

  • 最大耗散功率:

    0.9W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-12

  • vtest:

    20

  • htest:

    140000000

  • atest:

    2

  • wtest:

    0.9

詳細(xì)參數(shù)

  • 型號(hào):

    2SA116

  • 制造商:

    TOSHIBA

  • 制造商全稱:

    Toshiba Semiconductor

  • 功能描述:

    TRANSISTOR(STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
CJ/長(zhǎng)電
2021+
TO-92L
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
詢價(jià)
TOS
24+
原廠封裝
5620
原裝現(xiàn)貨假一罰十
詢價(jià)
長(zhǎng)電
25+23+
TO-92M
23685
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
TOSHIBA
18+
TO-92
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
CJ/長(zhǎng)電
22+
TO-92M
57000
原裝正品現(xiàn)貨,可開13點(diǎn)稅
詢價(jià)
HGF
24+
TO-92
9862
全新原裝現(xiàn)貨/假一罰百!
詢價(jià)
TOSHIBA
24+
TO-92
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價(jià)
CJ/長(zhǎng)電
22+
TO-92M
20000
深圳原裝現(xiàn)貨正品有單價(jià)格可談
詢價(jià)
CJ/長(zhǎng)電
21+
TO-92M
30000
百域芯優(yōu)勢(shì) 實(shí)單必成 可開13點(diǎn)增值稅發(fā)票
詢價(jià)
長(zhǎng)電
21+
TO-92M
2000
原裝現(xiàn)貨假一賠十
詢價(jià)
更多2SA116供應(yīng)商 更新時(shí)間2025-3-27 14:00:00