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2SC5750

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseofgoldelectrodes ?4-pinsuperminimoldpackage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5750-T1

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseofgoldelectrodes ?4-pinsuperminimoldpackage

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5751

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabil

CEL

California Eastern Labs

2SC5751

Marking：R54；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5751-T2

Marking：R54；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseofgol

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SC5752

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseofgol

CEL

California Eastern Labs

2SC5752

Marking：R55；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5752-T1

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseofgol

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SC5752-T1

Marking：R55；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliabilitythroughuseof

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SC575

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
24+
30000
詢價(jià)
NEC
23+
SOT343
31000
全新原裝
 詢價(jià)
RENESAS
23+
SOT-343
63000
原裝正品現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
23+
SOT-343
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
California Eastern Labs
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
 詢價(jià)
RENESAS/瑞薩
22+
SOT343
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
24+
N/A
76000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CEL
24+
SC-82A SOT-343
9350
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
NEC
23+
SOT343
5800
詢價(jià)
NEC
6000
面議
19
SOT343
 詢價(jià)
更多2SC575供應(yīng)商 更新時(shí)間2025-4-6 16:30:00

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