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2SC5753

Marking：R55；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5753-T2

Marking：R55；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES ?Idealformediumoutputpoweramplification ?PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm ?HFT3technology(fT=12GHz)adopted ?Highreliab

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5754

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:η

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SC5754

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:η

CEL

California Eastern Labs

2SC5754

Marking：R57；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5754-T2

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:η

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SC5754-T2

Marking：R57；NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES ?Idealfor460MHzto2.4GHzmediumoutputpoweramplification ?PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm ?Highcollectorefficiency:

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SC5755

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications ?HighDCcurrentgain:hFE=400to1000(IC=0.2A) ?Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) ?High-speedswitching:tf=25ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5755

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SC5757

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features ?Supercompactpackage:MFPAK(1.4x0.8x0.59mm)

HitachiHitachi Semiconductor

日立日立公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SC575

  • 制造商：

    Renesas Electronics Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
30000
詢價(jià)
NEC
23+
SOT343
31000
全新原裝
 詢價(jià)
RENESAS
23+
SOT-343
63000
原裝正品現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
23+
SOT-343
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
California Eastern Labs
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
RENESAS/瑞薩
22+
SOT343
25000
只有原裝原裝,支持BOM配單
 詢價(jià)
24+
N/A
76000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
CEL
24+
SC-82A SOT-343
9350
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
NEC
23+
SOT343
5800
詢價(jià)
NEC
6000
面議
19
SOT343
 詢價(jià)
更多2SC575供應(yīng)商 更新時(shí)間2025-4-8 16:30:00

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