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2SK3060-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3060isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=35A) RDS(on)2=20mΩMAX.(VGS=4.0V,ID=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3061

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplication. *Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,ID=35A) *LowCiss:Ciss=5200pFTYP. *Built-ingatepro

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3061

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3061isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3062-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5m?MAX.(VGS=10V,ID=35A) RDS(on)2=12m?MAX.(VGS=4.0V,I

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3062-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3062isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Lowon-stateresistance RDS(on)1=8.5mΩMAX.(VGS=10V,ID=35A) RDS(on)2=12mΩMAX.(VGS=4.0V,ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK30

  • 制造商：

    ROHM

  • 制造商全稱：

    Rohm

  • 功能描述：

    Small switching(30V, 0.1A)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
TOS
24+
TO-92
20000
詢價(jià)
東芝原裝
19+
TO-92
59538
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
TO-92
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
TOS
23+
小功率三極管
20000
全新原裝假一賠十
 詢價(jià)
TOS
23+
DIP
5800
正品原裝貨價(jià)格低
 詢價(jià)
TOS
24+
DIP
3100
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
 詢價(jià)
TOS
23+
TO92
1500
絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
KODENSHI
13+
DIP
21108
原裝分銷
 詢價(jià)
TOSHIBA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
TOSHIBA
24+/25+
400
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
更多2SK30供應(yīng)商 更新時(shí)間2025-4-9 16:30:00

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