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2SK3353-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5m?MAX.(VGS=10V,ID=41A) RDS(on)2=14m?MAX.(VGS=4V,ID=41A) ?LowCiss:Ciss=4650pFTYP. ?Built-in

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3353-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3353-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3353isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=9.5mΩMAX.(VGS=10V,ID=41A) RDS(on)2=14mΩMAX.(VGS=4V,ID=41A) ?Lo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3354

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3354

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=6300pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3354

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3354-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3354-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3354-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0m?MAX.(VGS=10V,ID=42A) RDS(on)2=12m?MAX.(VGS=4V,ID=42A) ?LowCiss:Ciss=6300pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3354-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    2SK33

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
TOSHIBA
23+
TO-252
6200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
TOSHIBA
13+
TO-92S
6258
原裝分銷
 詢價
NEC
24+
TOP-3
5000
詢價
富士通
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
TOSHIBA
24+/25+
850
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
TOSHIBA
24+
TO-92S
14090
原裝現(xiàn)貨假一罰十
 詢價
FSC
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
TOSHIBA
23+
SOT-523
6680
全新原裝優(yōu)勢
 詢價
TOSHIBA
2016+
TO-252
6000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
更多2SK33供應(yīng)商 更新時間2025-4-8 10:50:00

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