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2SK3354-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3354isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=8.0mΩMAX.(VGS=10V,ID=42A) RDS(on)2=12mΩMAX.(VGS=4V,ID=42A) ?Low

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3355

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4V,ID=42A) ●LowCiss:Ciss=9800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3355

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3355-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3355-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3355-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8m?MAX.(VGS=10V,ID=42A) RDS(on)2=8.8m?MAX.(VGS=4.0V,ID=42A) ?LowCiss:Ciss=9800pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3355-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3355isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=5.8mΩMAX.(VGS=10V,ID=42A) RDS(on)2=8.8mΩMAX.(VGS=4.0V,ID=42A) ?

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK33

  • 制造商：

    Panasonic Industrial Company

  • 功能描述：

    TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PANASONIC
17+
0402-3
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
NEC
24+
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
TOSHIBA
24+/25+
850
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
TOSHIBA
23+
NA
4000
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553
 詢價(jià)
TOSHIBA
24+
TO-92S
14090
原裝現(xiàn)貨假一罰十
 詢價(jià)
RENESAS
21+
TO-252
2000
只做原裝,絕對(duì)現(xiàn)貨,原廠代理商渠道,歡迎電話微信查
 詢價(jià)
TOSHIBA
23+
SOT-523
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
NEC
19+
TO-252
59559
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
NEC
24+
TO-252
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
FUJI
23+
TO-220
8000
原裝正品,假一罰十
 詢價(jià)
更多2SK33供應(yīng)商 更新時(shí)間2025-4-10 8:30:00

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