BC858C

Marking：3K；Package：SOT-23；PNP Transistors

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

BCV62B

Marking：3K；Package：SOT143B；PNP general-purpose double transistors

Featuresandbenefits *Lowcurrent(max.100mA) *Lowvoltage(max.30V) *Matchedpairs *AEC-Q101qualified *SmallSMDplasticpackage

BZX884S-B62

Marking：3K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B62-Q

Marking：3K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

DESD1CAN2WQ-7

Marking：3K；Package：SOT323；CAN BUS ESD PROTECTION DIODE

Features ?150WPeakPowerDissipationperLine(8/20μsWaveform) ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±23kV,Contact±23kV ?2ChannelsofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFre

PBSS5120T

Marking：3K；Package：SOT23；20 V, 1 A PNP low VCEsat (BISS) transistor

FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtolessheatgeneration ?Reducedprinted-circuitboardrequirements ?CosteffectivealternativeforMOSFETsinspecificapplications. APPLICATIONS ?Powermanage

PMN120ENE

Marking：3K；Package：SOT457；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?TrenchMOSFETtechnology ?Logic-levelcompatible ?Veryfastswitching ?Electr

TDZ6V2J

Marking：3K；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications ?Generalregulationfunctions ?Non-repetitivepeakreversepower dissipation:?180W ?Lowdifferen

TTA011

Marking：3K；Package：PW-Mini；Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(VCE=-2V,IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=60ns(typ.)(IC=-1.6A)

BC848CW

Marking：3K；Package：SOT-323；NPN Silicon Epitaxial General Purpose Transistors