BAS30LS

Marking：3N；Package：DFN1006BD-2；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaleadlessultrasmallDFN1006BD-2(SOD882BD) Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Lowleakagecurrent ?Highreversevoltage

BAS30LS-Q

Marking：3N；Package：DFN1006BD-2；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinaleadlessultrasmallDFN1006BD-2(SOD882BD) Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Highswitchingspeed:trr≤50ns ?Lowleakagecurrent ?Highreversevoltage

D18V0S1U3LP20-7

Marking：3N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

MMBT3906T

Marking：3N；Package：SOT-523；Plastic-Encapsulate Transistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable AlsoAvailableinLeadFreeVersion

MMBT3906T

Marking：3N；Package：SOT-523；PNP Transistors

■Features ●EpitaxialPlanarDieConstruction ●AlsoAvailableinLeadFreeVersion ●ComplementarytoMMBT3904T

MMBT3906T

Marking：3N；Package：SOT-523；PNP General Purpose Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailable(MMBT3904T). ●LowCurrent(Max:-200mA). ●LowVoltage(Max:-40V). APPLICATIONS ●Idealformediumpoweramplificationandswitching.

PBSS5255PAPS-Q

Marking：3N；Package：DFN2020D-6；55V, 2A PNP/PNP low VCEsat (BISS) double transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)doubletransistorinaleadlessmedium powerDFN2020D-6(SOT1118D)Surface-MountedDevice(SMD)plasticpackagewithvisibleand solderablesidepads. 2.Featuresandbenefits ?Verylowcollector-emittersaturati

PESD2CANFD27L-U

Marking：3N；Package：SC-70；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323(SC70)Surface-MountedDevice(SMD)plasticpackage designedtoprotecttwoautomotiveIn-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticdischarge(ESD)andothertransients. 2.Featuresandbenefits ?Reverse

PESD2CANFD27LU-Q

Marking：3N；Package：SOT323；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323(SC70)Surface-MountedDevice(SMD)plasticpackage, designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticdischarge(ESD)andothertransients. 2.Featuresandbenefits ?Reverse

PMN40ENA

Marking：3N；Package：SC-74；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?ExtendedtemperaturerangeTj=175°C ?TrenchMOSFET