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BD50HC0VEFJ-ME2

Marking:50HC0V;Package:HTSOP-J8;Automotive 1.0A Variable Output LDO Regulator

●Features ?Highaccuracyreferencevoltagecircuit ?Built-inOverCurrentProtectioncircuit(OCP) ?Built-inThermalShutDowncircuit(TSD) ?Withshutdownswitch ?AEC-Q100Qualified

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD50HC5MEFJ-ME2

Marking:50HC5M;Package:HTSOP-J8;Automotive 1.5A Variable Output LDO Regulator

●Features ?Highaccuracyreferencevoltagecircuit ?Built-inOverCurrentProtectioncircuit(OCP) ?Built-inThermalShutDowncircuit(TSD) ?Withshutdownswitch ?AEC-Q100Qualified

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD50HC5VEFJ-ME2

Marking:50HC5V;Package:HTSOP-J8;Automotive 1.5A Variable Output LDO Regulator

●Features ?Highaccuracyreferencevoltagecircuit ?Built-inOverCurrentProtectioncircuit(OCP) ?Built-inThermalShutDowncircuit(TSD) ?Withshutdownswitch ?AEC-Q100Qualified

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BSC500N20NS3

Marking:500N20NS;Package:PG-TDSON-8;OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Halogen-freeaccordingtoIEC61249-2-21 ?Idealforhigh-frequencyswitchinga

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

D50V0S1U2LP1608-7

Marking:50E;Package:U-DFN1608-2;ONE CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

DIODES

Diodes Incorporated

D50V0S1U2LP1610-7

Marking:50T;Package:U-DFN1610-2;ONE CHANNEL HIGH SURGE TVS DIODE

Features ?ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV ?OneChannelofESDProtection ?LowChannelInputCapacitance ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplications

DIODES

Diodes Incorporated

FSB50760BSF

Marking:50760BSF;Package:SPM5P-023;600 V RDS(ON) = 830 m (Max) SuperFET MOSFET 3?Phase Inverter with Gate Drivers and Protection

GeneralDescription TheFSB50760BSF/FSB50760BSFSisanadvancedMotion SPM5moduleprovidingafully?featured,high?performanceinverter outputstageforACInduction,BLDCandPMSMmotorssuchas refrigerators,fansandpumps.Thesemodulesintegrateoptimizedgate driveofthebuilt?inM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FSB50760BSFS

Marking:50760BSFS;Package:SPM5P-023;600 V RDS(ON) = 830 m (Max) SuperFET MOSFET 3?Phase Inverter with Gate Drivers and Protection

GeneralDescription TheFSB50760BSF/FSB50760BSFSisanadvancedMotion SPM5moduleprovidingafully?featured,high?performanceinverter outputstageforACInduction,BLDCandPMSMmotorssuchas refrigerators,fansandpumps.Thesemodulesintegrateoptimizedgate driveofthebuilt?inM

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

HA9P5002-5Z

Marking:50025Z;Package:8LdSOIC;110MHz, High Slew Rate, High Output Current Buffer

TheHA-5002isamonolithic,wideband,highslewrate,highoutputcurrent,bufferamplifier. UtilizingtheadvantagesoftheIntersilD.I.technologies,theHA-5002currentbufferoffers1300V/μsslewratewith110MHzofbandwidth.The±200mAoutputcurrentcapabilityisenhancedbya3Ωoutput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HA9P5002-9Z

Marking:50029Z;Package:8LdSOIC;110MHz, High Slew Rate, High Output Current Buffer

TheHA-5002isamonolithic,wideband,highslewrate,highoutputcurrent,bufferamplifier. UtilizingtheadvantagesoftheIntersilD.I.technologies,theHA-5002currentbufferoffers1300V/μsslewratewith110MHzofbandwidth.The±200mAoutputcurrentcapabilityisenhancedbya3Ωoutput

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    50

  • 制造商:

    Apex Tool Group

  • 類別:

    工具 > 專用工具

  • 包裝:

    散裝

  • 描述:

    TAPE,LONG UNIVERSAL 3/8\

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