BAV116WQ-7-F

Marking：50；Package：SOD123；SURFACE MOUNT LOW LEAKAGE DIODE

Features ?SurfaceMountPackageIdeallySuitedforAutomatedInsertion ?VeryLowLeakageCurrent ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?TheBAV116WQissuitableforautomotiveapplicationsrequiringspecificchangecon

BZX584C2V4

Marking：50；Package：SOD523；Zener Diode

Features ●Highreliability ●Verysharpreversecharacteristic ●Lowreversecurrentlevel ●ZenerVoltage2.4V~47V

BZX84-A2V4

Marking：50；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

ESD05V02D-C

Marking：50；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features UnidirectionalESDprotection LowClampingVoltage Surfacemountpackage. UltrasmallSMDpackage. Stand?offVoltage:5.0V Lowleakagecurrent 150WattsPeakPulsePowerperLine(tp=8/20μs) ProvidesESDprotectiontoIEC61000-4-2(ESD): ±30kV(airdischarge) ±30kV(contactdisc

ESD05V02DS-C

Marking：50；Package：DFN0603；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified UltrasmallSMDpackage ProtectsOneBidirectionalI/Oline Lowclampingvoltage Workingvoltage:5.0V Lowleakagecurrent IEC61000-4-5LIGHTING)12A(8/20μs) IEC61000-4-2(ESD):±30kV(airdischarge) ±30kV(contactdischarge);

PDTC124TK

Marking：50；Package：SOT346；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTC124TK

Marking：50；Package：SOT346；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTC124TU

Marking：50；Package：SOT323；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PDTC124TU

Marking：50；Package：SOT323；NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

ZV950V2TA

Marking：50；Package：SOD-523；SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES

DeviceDescription Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristics,lowvoltageoperationandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Thesepartscanbeusedwithcontrolvoltagesfrom0