BZX884S-C8V2

Marking：5K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C8V2-Q

Marking：5K；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM1Z20

Marking：5K；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features ?Totalpowerdissipation:max.500mW ?Smallplasticpackagesuitableforsurfacemounteddesign ?Toleranceapproximately±5

MM1Z20

Marking：5K；Silicon Planar Zener Diodes

FEATURES ?Totalpowerdissipation:Max.500mW. ?Widezenerreversevoltagerange2.0Vto75V. ?Smallplasticpackagesuitableforsurfacemounteddesign. ?Toleranceapproximately±5

NHDTA143ZU

Marking：5K；Package：SOT323；80 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Highbreakdownvoltage ?Built-inresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

NHDTA143ZU

Marking：5K；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

1.Generaldescription PNPResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-Mounted Device(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPNcomplement: NHDTA123JU2.247NHDTC123JU NHDTA143ZU4.747NHDTC143

NXV55UN

Marking：5K；Package：SOT23；30 V, N-channel Trench MOSFET

description N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ?Lowthresholdvoltage ?Veryfastswitching ?TrenchMOSFETtechnology Applications ?Relaydriver

PBSS303PX

Marking：5K；Package：SC-62；30 V, 5.1 A PNP low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PMPB16EP

Marking：5K；Package：SOT1220；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits ?Logic-levelcompatible ?TrenchMOSFETtechnology ?Sidew

RT5753AHGQWA

Marking：5K；Package：WDFN-8SL；3A, 1.2MHz, 6V Synchronous Step-Down Converter In WDFN-8L 2x2

GeneralDescription TheRT5753A/B/C/Disasimple,easy-to-use,3A synchronousstep-downDC-DCconverterwithaninput supplyvoltagerangefrom2.5Vto6V.Thedevicebuilds inanaccurate0.6Vreferencevoltageandintegrateslow RDS(ON)powerMOSFETstoachievehighefficiencyin WDFN-8L