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IPA60R280C6

Marking:6R280C6;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R280E6

Marking:6R280E6;Package:PG-TO220FullPAK;600V CoolMOS E6 Power Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R330P6

Marking:6R330P6;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R380C6

Marking:6R380C6;Package:PG-TO220;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R520C6

Marking:6R520C6;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSTMC6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffer

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R520E6

Marking:6R520E6;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOSE6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffered

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R600CP

Marking:6R600P;Package:PG-TO200FP;CoolMos Power Transistor

Features ?Lowestfigure-of-meritRonxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) ?Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisdesignedfor: ?Hards

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R650CE

Marking:6R650CE;Package:PG-TO220FullPAK;600V CoolMOS? CE Power Transistor

Features ?ExtremelylowlossesduetoverylowFOMRdson*QgandEoss ?Veryhighcommutationruggedness ?Easytouse/drive ?Pb-freeplating,Halogenfreemoldcompound ?Qualifiedforstandardgradeapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R125C6

Marking:6R125C6;Package:PG-TO263;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB60R160P6

Marking:6R160P6;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    6R

  • 制造商:

    Caterpillar

  • 功能描述:

    Female Weather Pack Tin Plated Terminal, Cable Range 2.00 - 1.00 mm2

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就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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加我QQ或微信咨詢更多詳細(xì)信息,
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一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
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更多6R供應(yīng)商 更新時(shí)間2025-4-8 9:30:00