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IPP60R125C6

Marking:6R125C6;Package:PG-TO220;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R125CP

Marking:6R125P;Package:6R125P;CoolMOS Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R160P6

Marking:6R160P6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190C6

Marking:6R190C6;Package:PG-TO220;600V CoolMOS C6 Power Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSC6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R190P6

Marking:6R190P6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS?P6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theoffereddevicesprovideallbenefitsofafastsw

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R199CP

Marking:6R199P;Package:PG-TO220;CoolMOS Power Transistor

Features ?Lowestfigure-of-meritRONxQg ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: ?Hardswitchingtopologies,forServe

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280C6

Marking:6R280C6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS?C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R280E6

Marking:6R280E6;Package:PG-TO220;600V CoolMOS E6 Power Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R330P6

Marking:6R330P6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features ?IncreasedMOSFETdv/dtruggedness ?ExtremelylowlossesduetoverylowFOMRdson^QgandEoss ?Veryhi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R380C6

Marking:6R380C6;Package:PG-TO220;MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    6R

  • 制造商:

    Caterpillar

  • 功能描述:

    Female Weather Pack Tin Plated Terminal, Cable Range 2.00 - 1.00 mm2

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更多6R供應商 更新時間2025-4-8 15:00:00