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BD650

SiliconPNPDarlingtonPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD650CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BD650CS

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BD650CT

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650F

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BFP650

NPNSiliconGermaniumRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearityLowNoiseSiGe:CNPNRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearitySiliconGermaniumBipolarRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
AKM
25+
BGA
3250
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
 詢價(jià)
AKM
2020+
QFN8
9990
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
AKM
2017+
QFN8
6528
只做原裝正品假一賠十!
 詢價(jià)
AKM
24+
QFN8
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
AKM
22+
BGA
8200
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)!!
 詢價(jià)
BGA
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
AKM
25+23+
BGA
12679
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
AKM
23+
XX
999999
原裝正品現(xiàn)貨量大可訂貨
 詢價(jià)
AKM
19+
XX
20000
5000
 詢價(jià)
AKM
24+
XX
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
 詢價(jià)
更多AK-650供應(yīng)商 更新時(shí)間2025-4-9 11:02:00

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