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ATC100B6R8CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features ?Designedforwideinstantaneousbandwidthap

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B7R5CT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B7R5JT500XT

RF Power Field Effect Transistor

880MHz,10WAVG.,28VSINGLEN-CDMALATERALN-CHANNELBROADBANDRFPOWERMOSFET Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesupto1000MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge-signal,common-sourceamplifierapplica

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B820JT500XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B8R2BT250XT

RF LDMOS Wideband Integrated Power Amplifiers

RFLDMOSWidebandIntegratedPowerAmplifiers TheMW7IC2240Nwidebandintegratedcircuitisdesignedwithon-chipmatchingthatmakesitusablefrom2000to2200MHz.Thismulti-stagestructureisratedfor24to32Voltoperationandcoversalltypicalcellularbasestationmodulationformatsin

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

ATC100B8R2BT500XT

RF Power LDMOS Transistor N?Channel Enhancement?Mode Lateral MOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features ?Advancedhighperformancein?packageDoherty ?Greaternegativegate?sourcevoltagerangeforimprovedClassCoperation

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B8R2CT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom2110to 2170MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B8R2CT500XT

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These32WRFpowerLDMOStransistorsaredesignedforcellularbase stationapplicationsrequiringverywideinstantaneousbandwidthcapability coveringthefrequencyrangeof1805to1880MHz. Features ?DesignedforWideInstantaneousBandwidt

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B8R2CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features ?Designedforwideinstantaneousbandwidthap

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

ATC100B8R2CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. ?TypicalDohertySingle--Carrier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào):

    ATC

  • 制造商:

    American Technical Ceramics Corp

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更多ATC供應(yīng)商 更新時(shí)間2025-4-21 17:07:00