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ATC100B1R5BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features ?GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications ?InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B1R5BT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. ?TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B1R6CT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This38WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationsrequiringverywideinstantaneousbandwidthcapabilitycovering thefrequencyrangeof1805to1995MHz. Features ?Designedforwideinstantaneousbandwidthap

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B1R8BT500XT

RF Power LDMOS Transistor N?Channel Enhancement?Mode Lateral MOSFET

This93WasymmetricalDohertyRFpowerLDMOStransistorisdesignedfor cellularbasestationapplicationscoveringthefrequencyrangeof1427to 1517MHz. Features ?Advancedhighperformancein?packageDoherty ?Greaternegativegate?sourcevoltagerangeforimprovedClassCoperation

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B1R8BT500XT

N--Channel Enhancement--Mode Lateral MOSFETs

Features ?GreaterNegativeGate--SourceVoltageRangeforImprovedClassC Operation ?DesignedforDigitalPredistortionErrorCorrectionSystems ?OptimizedforDohertyApplications ?InTapeandReel.R3Suffix=250Units,32mmTapeWidth,13--inchReel.

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B220JT500XT

N-Channel Enhancement-Mode Lateral MOSFET

Features ?Advancedhighperformancein--packageDoherty ?Greaternegativegate--sourcevoltagerangeforimprovedClassC operation ?Designedfordigitalpredistortionerrorcorrectionsystems

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B240JT500XT

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedprimarilyforCWlarge-signaloutputanddriverapplicationswithfrequenciesupto600MHz.Devicesareunmatchedandaresuitableforuseinindustrial,medicalandscientificapplications.

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導體

ATC100B270JT500XT

RF Power LDMOS Transistor

N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. ?TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B2R0BT500XT

RF Power LDMOS Transistor

N?ChannelEnhancement?ModeLateralMOSFET This2WRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof728to960MHz. Features ?Greaternegativegate?sourcevoltagerangeforimprovedClassC operation ?On?chipmatching(50ohmin

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

ATC100B2R0BT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

詳細參數

  • 型號:

    ATC

  • 制造商:

    American Technical Ceramics Corp

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更多ATC供應商 更新時間2025-4-21 17:07:00