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BD48K40G-TR

Marking:Bd;Package:SSOP3;Standard CMOS Voltage Detector IC

Description ROHM’sBD48□□G/FVEandBD49□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICseries.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,sothattheseriesmaybesel

ROHMRohm

羅姆羅姆半導體集團

BU33JA3DG-CTL

Marking:bd;Package:SSOP5;For Automotive 300 mA CMOS LDO Regulators

GeneralDescription TheBUxxJA3DG-Cseriesarelinearregulatorsdesigned aslowcurrentconsumptionproductsforpowersuppliesin variousautomotiveapplications. Theseproductsaredesignedforupto6.5Vasanabsolute maximumvoltageandtooperateuntil300mAforthe outputcurrentw

ROHMRohm

羅姆羅姆半導體集團

BU33JA3DG-CTR

Marking:bd;Package:SSOP5;For Automotive 300 mA CMOS LDO Regulators

GeneralDescription TheBUxxJA3DG-Cseriesarelinearregulatorsdesigned aslowcurrentconsumptionproductsforpowersuppliesin variousautomotiveapplications. Theseproductsaredesignedforupto6.5Vasanabsolute maximumvoltageandtooperateuntil300mAforthe outputcurrentw

ROHMRohm

羅姆羅姆半導體集團

BZT52H-C6V2

Marking:BD;Package:SOD123F;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZT52H-C6V2-Q

Marking:BD;Package:SOD123F;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZX884-C7V5

Marking:BD;Package:DFN1006-2;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:Ptot≤250mW ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Twotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

CDBQC42-HF

Marking:BD;Package:SOD-923F;SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Majoritycarrierconduction. -Extremelythin/leadlesspackage. -Designedformountingonsmallsurface.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

KDZ22B

Marking:BD;Package:PMDU;Zener diode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導體集團

KDZ22B

Marking:BD;Package:PMDU;Zener diode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導體集團

KDZ22B

Marking:BD;Package:PMDU;Zener diode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

羅姆羅姆半導體集團

晶體管資料

  • 型號:

    BD106(A,B)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    36V

  • 最大電流允許值:

    2.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BD109,BD124,BD162,BD243,BDY15,3DA3A,

  • 最大耗散功率:

    11.5W

  • 放大倍數(shù):

  • 圖片代號:

    E-8

  • vtest:

    36

  • htest:

    999900

  • atest:

    2.5

  • wtest:

    11.5

詳細參數(shù)

  • 型號:

    BD

  • 制造商:

    STMicroelectronics

  • 功能描述:

    TRANSISTOR, NPN TO-126 , Transistor

  • type:

    Power General Purpose, Transistor

  • polarity:

    NPN, Case

  • style:

    TO-126, Voltage,

  • Vceo:

    80V, Current, Ic

  • max:

    1.5A, Power,

  • Ptot:

    12.5W, hfe,

  • min:

    40, Current, Ic

  • hfe:

    0.15A, Voltage,

  • Vcbo:

    80V, Current, RoHS

  • Compliant:

    Yes

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更多BD供應商 更新時間2025-4-3 16:45:00