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P6SMBJ12C

Marking:BD;Package:SMB;600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

WTEWon-Top Electronics

毅星電子毅星電子股份有限公司

P6SMBJ13CA

Marking:BD;SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

PDZ7.5BGW

Marking:BD;Package:SOD123;Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits ?Non-repetitivepeakreversepowerdissipation:PZSM≤40W ?Totalpowerdissipation:Ptot≤365mW ?Toleranceseries: B2:approximately±2 ?

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMBT3906YS

Marking:BD;Package:SOT363;40 V, 200 mA PNP/PNP general-purpose double transistor

1.1Generaldescription PNP/PNPgeneral-purposedoubletransistorinaSOT363(SC-88)verysmall Surface-MountedDevice(SMD)plasticpackage. 1.2Features nGeneral-purposedoubletransistor nBoard-spacereduction nAEC-Q101qualified 1.3Applications nGeneral-purposeswitchingandampl

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMEG4010ER

Marking:BD;Package:CFP3;40 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤1A ?Reversevoltage:VR≤

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMEG4010ER-Q

Marking:BD;Package:CFP3;40 V, 1 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?Averageforwardcurrent:IF(AV)≤1A ?Reversevoltage:VR≤

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS45VP1UP

Marking:BD;Package:SOD128;600 W Transient Voltage Suppressor

1.1Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatlead Surface-MountedDevice(SMD)plasticpackage,designedfortransientovervoltage protection. 1.2Featuresandbenefits 1.3Applications Powersupplyprotection Automotiveapplic

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PTVS45VP1UP-Q

Marking:BD;Package:SOD128;600 W Transient Voltage Suppressor

1.Generaldescription 600WunidirectionalTransientVoltageSuppressor(TVS)inaSOD128smallandflatleadSurface- MountedDevice(SMD)plasticpackage,designedfortransientovervoltageprotection. 2.Featuresandbenefits ?Ratedpeakpulsepower:PPPM=600W ?Reversestandoffvolta

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

RB161BWL-40

Marking:BD;Package:WBFBP-02L;Plastic-Encapsulate Diodes

FEATURES Lowforwardvoltagedrop Smallpowermoldtype LowIR Smallcurrentrectification APPLICATIONS Lowvoltagerectification HighefficiencyDC-to-DCconversion Switchmodepowersupply LEDbacklightformobileapplication Lowpowerconsumptionapplications Reversepolar

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SMAJ12

Marking:BD;Package:DO-214AC;3.3 To 440V 400W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan1μAabove10V 400WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

晶體管資料

  • 型號:

    BD106(A,B)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    36V

  • 最大電流允許值:

    2.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BD109,BD124,BD162,BD243,BDY15,3DA3A,

  • 最大耗散功率:

    11.5W

  • 放大倍數(shù):

  • 圖片代號:

    E-8

  • vtest:

    36

  • htest:

    999900

  • atest:

    2.5

  • wtest:

    11.5

詳細參數(shù)

  • 型號:

    BD

  • 制造商:

    STMicroelectronics

  • 功能描述:

    TRANSISTOR, NPN TO-126 , Transistor

  • type:

    Power General Purpose, Transistor

  • polarity:

    NPN, Case

  • style:

    TO-126, Voltage,

  • Vceo:

    80V, Current, Ic

  • max:

    1.5A, Power,

  • Ptot:

    12.5W, hfe,

  • min:

    40, Current, Ic

  • hfe:

    0.15A, Voltage,

  • Vcbo:

    80V, Current, RoHS

  • Compliant:

    Yes

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Analog Devices B.V.
22+
NA
5
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N/A
24+
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1070
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23+
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50000
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UTG
23+
SOT-89
20000
原裝正品 歡迎咨詢
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更多BD供應(yīng)商 更新時間2025-4-8 15:10:00