BLS6G2731-6G分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

General description

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features and benefits

■ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage

of 32 V, an IDq of 25 mA, a tp of 100 μs and a δ of 10 :

◆ Output power = 6 W

◆ Power gain = 15 dB

◆ Efficiency = 33

■ Integrated ESD protection

■ High flexibility with respect to pulse formats

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (2.7 GHz to 3.1 GHz)

■ Internally matched for ease of use

■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

■ S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range