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BSS123N

OptiMOS??Small-Signal-Transistor

Features ?N-channel ?Enhancementmode ?Logiclevel(4.5Vrated) ?Avalancherated ?QualifiedaccordingtoAECQ101 ?100lead-free;RoHScompliant,Halogenfree

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSS123N3

Marking：SA；Package：SOT-23；N-CHANNEL MOSFET

Description TheBSS123N3isaN-channelenhancement-modeMOSFET. Features ?Lowon-resistance ?Highspeedswitching ?Low-voltagedrive(2.5V) ?Easilydesigneddrivecircuits ?Pb-freeleadplatingandhalogen-freepackage

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

BSS123Q

N-CHANNELENHANCEMENTMODEMOSFET

Features LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage HighDrain-SourceVoltageRating TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS123Qissuitableforautomotiveapplicat

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInp

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

BSS123W

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?HighDrain-SourceVoltageRating ?LeadFree/RoHSCompliant(Note2) ?QualifiedtoAEC-Q101StandardsforHighReliability ?GreenDevice,Note3and4

DIODES

Diodes Incorporated

BSS123W

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

Description ThisN-channelenhancementmodefieldeffecttransistorisproducedusinghighcelldensity,trenchMOSFETtechnology.Thisproductminimizeson-stateresistancewhileprovidingrugged,reliableandfastswitchingperformance.Thisproductisparticularlysuitedforlow-voltage,low-c

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BSS123W

SOT-323Plastic-EncapsulateMOSFETS

FEATURE SurfaceMountPackage HighDensityCellDesignforExtremelyLowRDS(ON) VoltageControlledSmallSignalSwitch RuggedandReliable

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

BSS123W

N-ChannelEnhancementModeMOSFET

FUTUREWAFER

FutureWafer Tech Co.,Ltd

BSS123W

N-ChannelMOSFET

FEATURE ?SurfaceMountPackage ?HighDensityCellDesignforExtremelyLowRDS(ON) ?VoltageControlledSmallSignalSwitch ?RuggedandReliable APPLICATION ?SmallServoMotorControls ?PowerMOSFETGateDrivers ?SwitchingApplication

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BSS123N

  • 制造商：

    Infineon Technologies

  • 功能描述：

    SP000870646

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
24+
SOT-23
45000
熱賣優(yōu)勢(shì)現(xiàn)貨
 詢價(jià)
Infineon(英飛凌)
23+
N/A
12000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
INFINEON/英飛凌
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價(jià)
Infineon(英飛凌)
23+
SOT-23
14843
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
INFINEON/英飛凌
23+
SOT-23
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
INFINEON
2016+
SOT23
81000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
INFINEON
23+
SOT-23
121212
原裝正品現(xiàn)貨
 詢價(jià)
Infineon/英飛凌
1937+
SOT23-3
9852
只做進(jìn)口原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
英飛凌
21+
PG-SOT23-3
6000
絕對(duì)原裝現(xiàn)貨
 詢價(jià)
更多BSS123N供應(yīng)商 更新時(shí)間2025-2-16 10:11:00

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