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CEP16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP16N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU16N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU16N10L

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

CEU16N10SL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

ST16N10

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細參數(shù)

  • 型號：

    CEP16N10L

  • 制造商：

    CET

  • 制造商全稱：

    Chino-Excel Technology

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
CET/華瑞
24+
TO-220
156576
明嘉萊只做原裝正品現(xiàn)貨
 詢價
CET
23+
TO-220
15000
原裝正品,假一罰十
 詢價
CET
24+
TO-220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
CET
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
CET
21+
TO-220
100
原裝現(xiàn)貨假一賠十
 詢價
CET/華瑞
23+
TO-220
22500
公司只做原裝正品
 詢價
CET/華瑞
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-220
2000
原廠代理 終端免費提供樣品
 詢價
CET
23+
TO-220
6000
原裝正品，支持實單
 詢價
CET
2231+
TO-220
13309
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
更多CEP16N10L供應(yīng)商 更新時間2025-2-11 15:40:00

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