首頁 >ST16N10>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

ST16N10

TO-252 Package design

STANSON

Stanson Technology

ST16N10

N-Channel 100 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

ST16N10

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

ST16N10-TP

Marking：16N10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features ?Ros10m0@VGS=10vV ?SuperhighdensitycelldesignforextremelylowRos)| ?Exceptionalon-resistanceandmaximumDCcurrent

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

CEB16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEC16N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED16N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

供應商型號品牌批號封裝庫存備注價格
VBsemi(臺灣微碧)
24+
TO-252
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
STANSON
2021+
TO252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
STANSON
24+
TO-252
503917
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
TO-252
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價
STANSON
22+
TO252
20000
深圳原裝現(xiàn)貨正品有單價格可談
 詢價
VBsemi(臺灣微碧)
2447
TO-252
105000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
VBsemi
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
STANSON
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
STANSON
21+
TO252
16800
只做原裝,質(zhì)量保證
 詢價
STANSON
21+
TO252
13880
公司只售原裝,支持實單
 詢價
更多ST16N10供應商 更新時間2025-4-11 15:38:00

相關規(guī)格書

更多

相關庫存

更多