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CES2307A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2307B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2307BB

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-3.4A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=108mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,5.4A,RDS(ON)=27m?@VGS=4.5V. RDS(ON)=36m?@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2308

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,5.4A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=36mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). RoHScompliant. SOT-23package. Ruggedandreliable. ESDProtected2KV.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2309

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-2.2A,RDS(ON)=165m?@VGS=-4.5V. RDS(ON)=300m?@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2310

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4.8A,RDS(ON)=34mΩ@VGS=10V. RDS(ON)=40mΩ@VGS=4.5V. RDS(ON)=60mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2310L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2312

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■20V,4.5A,RDS(ON)=33m?@VGS=4.5V. RDS(ON)=40m?@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2312

N-Channel 20 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters ?LoadSwitchforPortableApplications

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    CES

  • 制造商：

    SIIG

  • 功能描述：

    7.1 Channel USB Audio Sound Card

  • 功能描述：

    USB 7.1 SOUNDCARD BLACK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ADI/亞德諾
SOT23-6
6698
詢價(jià)
原廠
2022+
N/A
385000
專營現(xiàn)貨庫存,十五年優(yōu)質(zhì)供應(yīng)商
 詢價(jià)
MURATA
17+
SMD
9800
只做全新進(jìn)口原裝,現(xiàn)貨庫存
 詢價(jià)
村田
24+
2789
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢!
 詢價(jià)
CJ/長電
19+
SOT-553
16200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
CET/華瑞
24+
SOT-23
2550
原裝現(xiàn)貨假一賠十
 詢價(jià)
CJ/長電科技
18+
SOD-323
10000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價(jià)
MURATA
0711+
SMD
2083
全新原裝現(xiàn)貨
 詢價(jià)
進(jìn)口原裝
23+
SMD
40272
全新原裝現(xiàn)貨,專業(yè)代理熱賣
 詢價(jià)
CJ原裝長電
21+
SOD-323
10080
公司只做原裝,誠信經(jīng)營
 詢價(jià)
更多CES供應(yīng)商 更新時(shí)間2025-4-21 13:01:00

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