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CES-231210-18PM

SPEAKER

FEATURES ?8ohmratedimpedance ?1.0Wratedpower ?panelmount

CUID

CUI Devices

CES2313

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2313A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=86mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2314

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4A,RDS(ON)=50m?@VGS=10V. RDS(ON)=70m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2314

N-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverter

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CES2315

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2316

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,4.8A,RDS(ON)=34m?@VGS=10V. RDS(ON)=50m?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2317

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Lead-freeplating;RoHScompliant. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2317

P-Channel Enhancement Mode Field Effect Transistor

30V,-3.1A,RDS(ON)=80mW@VGS=-10V. RDS(ON)=90mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant. RDS(ON)=120mW@VGS=-2.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2320

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,5.2A,RDS(ON)=29mΩ(typ)@VGS=10V. RDS(ON)=45mΩ(typ)@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    CES

  • 制造商：

    SIIG

  • 功能描述：

    7.1 Channel USB Audio Sound Card

  • 功能描述：

    USB 7.1 SOUNDCARD BLACK

供應(yīng)商型號品牌批號封裝庫存備注價格
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SOT23-6
6698
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8000
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23+
65600
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23+
NA
1386
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2022+
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TOSHIBA(東芝)
23+
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20094
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更多CES供應(yīng)商 更新時間2025-4-21 13:01:00

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