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DMG4N65-TU

650V N-Channel Power MOSFET

Features RDS(ON)

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

DMG6302UDW

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtected ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecon

DIODES

Diodes Incorporated

DMG6302UDW-13

Marking：P5W；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtected ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecon

DIODES

Diodes Incorporated

DMG6302UDW-7

Marking：P5W；Package：SOT363；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?ESDProtected ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Forautomotiveapplicationsrequiringspecificchangecon

DIODES

Diodes Incorporated

DMG6601LVT

Marking：66G；Package：SOT23-6；N and P-Channel Enhancement Mode Power MOSFET

ProductSummary N-Channel Vps=30V,Ip=4A Ros(on)30mQ@Ves=10V(Typ) Ros(on)50mQ@Ves=-4.5V(Typ) P-Channel Vos=-30V,Ip=3A Ros(on)45mQ@Ves=-10V(Typ) Rosion)85mQ@Ves=-4.5V(Typ)

TECHPUBLICTECH PUBLIC Electronics co LTD

臺舟電子臺舟電子股份有限公司

DMG6968U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?25m?@VGS=4.5V ?29m?@VGS=2.5V ?36m?@VGS=1.8V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant ?ESDProtectedUpTo2kV MechanicalData ?Case:SOT-23 ?CaseMaterial:MoldedPlast

DIODES

Diodes Incorporated

DMG6968U-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowOn-Resistance ?25m?@VGS=4.5V ?29m?@VGS=2.5V ?36m?@VGS=1.8V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant ?ESDProtectedUpTo2kV MechanicalData ?Case:SOT-23 ?CaseMaterial:MoldedPlast

DIODES

Diodes Incorporated

DMG6968UDM

Marking：2N4；Package：SOT-26；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowGateCharge ?LowRDS(ON): ?24mΩ@VGS=4.5V ?28mΩ@VGS=2.5V ?34mΩ@VGS=1.8V ?LowInput/OutputLeakage ?ESDProtectedupto2kVHBM ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?

DIODES

Diodes Incorporated

DMG6968UDM-7

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features ?LowGateCharge ?LowRDS(ON): ?24mΩ@VGS=4.5V ?28mΩ@VGS=2.5V ?34mΩ@VGS=1.8V ?LowInput/OutputLeakage ?ESDProtectedupto2kVHBM ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?

DIODES

Diodes Incorporated

DMG6968UQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Description ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Applications ?Powermanagementfunctions ?DC-DCconverters ?Motorcontrols Features ?LowOn-Resistance ?Lo

DIODES

Diodes Incorporated

詳細參數(shù)

  • 型號：

    DMG

  • 功能描述：

    MOSFET MOSFET N-CHANNEL SOT-523

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
DIODES/美臺
22+
SOT23
17340
原裝正品現(xiàn)貨,可開13點稅
 詢價
DIODES
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價
DISCRETE
3000
DIO
75000
詢價
3000
24+
30000
詢價
DIODES美臺
21+
SOT23-6
25630
原裝正品
 詢價
DIODES(美臺)
21+
SOT23
12588
原裝現(xiàn)貨,量大可定
 詢價
DIODES
24+
SOT323
66800
原廠授權一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
PANASON
2020+
SOT23-6
16000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
PANASONIC
SOT353
11+
5750
全新原裝進口自己庫存優(yōu)勢
 詢價
DIODES
20+
2
公司優(yōu)勢庫存 熱賣中!
 詢價
更多DMG供應商 更新時間2025-4-4 16:20:00

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