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DMG2302UKQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapable(Note4)

DIODES

Diodes Incorporated

DMG2302UKQ-13

Marking:22K;Package:SOT23;N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapable(Note4)

DIODES

Diodes Incorporated

DMG2302UKQ-7

Marking:22K;Package:SOT23;N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapable(Note4)

DIODES

Diodes Incorporated

DMG2305UX

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowInputCapacitance ●FastSwitchingSpeed Applications ●Backl

DIODES

Diodes Incorporated

DMG2305UX-13

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowInputCapacitance ●FastSwitchingSpeed Applications ●Backl

DIODES

Diodes Incorporated

DMG2305UX-7

Low On-Resistance

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features ●LowOn-Resistance ●LowInputCapacitance ●FastSwitchingSpeed Applications ●Backl

DIODES

Diodes Incorporated

DMG2305UXQ

Marking:A5SHB;Package:SOT-23;-20V P-Channel Enhancement Mode MOSFET

Description toprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas4.5V.ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. TheusesadvancedtrenchtechnologyDMG2305UXQ GeneralFeatures VDS=-20VID=-4.9A RDS(ON)

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

DMG2307LQ

Marking:3407;Package:SOT-23;P-Channel Super Enhancement Mode MOSFET

GeneralDescription TrenchPowerLVMOSFETtechnology HighdensitycelldesignforLowRDS(ON) HighSpeedswitching Applications Batteryprotection Loadswitch Powermanagement

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

DMG2N60-TR

600V N-Channel Power MOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

DMG2N60-TU

600V N-Channel Power MOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一電子山東迪一電子科技有限公司

詳細(xì)參數(shù)

  • 型號:

    DMG

  • 功能描述:

    MOSFET MOSFET N-CHANNEL SOT-523

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多DMG供應(yīng)商 更新時間2025-4-4 11:08:00