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IRFD9210PBF

HEXFETPowerMOSFET

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerHEXFETdesignarchieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?D

IRF

International Rectifier

IRFD9210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE9210

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth

IRF

International Rectifier

IRFE9210

SimpleDriveRequirements

IRF

International Rectifier

IRFF9210

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr

IRF

International Rectifier

IRFF9210

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9210

SimpleDriveRequirements

IRF

International Rectifier

IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
E-CMOS
23+
SOT23-5
121200
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
E-CMOS
24+
SOT23-5
36365
專業(yè)代理DC-DC升壓IC,優(yōu)勢(shì)產(chǎn)品
 詢價(jià)
進(jìn)口原裝
23+
TSOP-14
1045
全新原裝
 詢價(jià)
2020+
SSOP-14
5000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢價(jià)
ECMOS
2016+
MSOP8
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
E-CMOS
20+
MSOP-8
2960
誠(chéng)信交易大量庫(kù)存現(xiàn)貨
 詢價(jià)
ECMOS
07+PBF
MSOP8
2832
現(xiàn)貨
 詢價(jià)
ECMOS
23+
MSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
E-COMS
23+
MSOP8
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
ECMOS
24+
NA/
3668
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
更多EC9210供應(yīng)商 更新時(shí)間2025-4-26 17:30:00

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