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EUP2570

1MHzBoostRegulatorwith18VIntegratedFETSwitchinTinySOT-23

EUTECHEutech Microelectronics Inc

德信科技德信科技股份有限公司

FDB2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDB2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesigned specificallyforswitchingontheprimarysideinthe isolatedDC/DCconverterapplication.Anyapplication requiringa150VMOSFETswithlowon-resistanceand fastswitchingwillbenefit. TheseMOSFETsfeaturefastersw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ?4.7A,150V.RDS(ON)=80m?@VGS=10VRDS(ON)=90m?@VGS=6V ?Lowgatecharge

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDD2570

N-channelEnhancementModePowerMOSFET

Features ?VDS=150V,ID=20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.7A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=80mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP2570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FDP2570

150VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesigned specificallyforswitchingontheprimarysideinthe isolatedDC/DCconverterapplication.Anyapplication requiringa150VMOSFETswithlowon-resistanceand fastswitchingwillbenefit. TheseMOSFETsfeaturefastersw

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS2570

PowerConverterTopologyandMOSFETSelectionfor48-VTelecom

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FDS2570

150VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

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