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IL710

HighSpeedDigitalIsolator

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IL710

3.3-V/5-VHIGH-SPEEDDIGITALISOLATORS

TITexas Instruments

德州儀器美國德州儀器公司

IL710T

T-SeriesWideTemperatureRangeHighSpeedDigitalCoupler

Description NVEsfamilyofhigh-speeddigitalisolatorsareCMOSdevicescreatedbyintegratingactivecircuitryandourGMR-basedandpatented*IsoLoop?technology.TheIL710Tofferstheuserthewidesttemperaturerangeavailableindigitalcouplers.Thesymmetricmagneticcouplingbarrierprov

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IR710PBF

HEXFET?PowerMOSFET

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF710

2.0A,400V,3.600Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF710

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF710

N-ChannelPowerMOSFETs,2.25A,350-400V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF710

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF710

IRF710-713MTP2N35/2N40N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriverandhighenergypulsecircuits. ?LowRDS(on) ?VGSRatedat±20V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

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