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HIP9010AB

EngineKnockSignalProcessor

TheHIP9010isusedtoprovideamethodofdetectingprematuredetonationor“Knock”inautomotiveengines. AblockdiagramofthisICisshowninFigure1.Thechipalternatelyselectsoneofthetwosensorsmountedontheengineblock.Twoprogrammablebandpassfiltersprocessthesignalfromb

Intersil

Intersil Corporation

IL9010D

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IL9010N

ICofcollectorelectricmotorcontroller

INTEGRAL

Integral Corp.

IRFD9010

HEXFET?TRANSISTORSP-CHANNELHEXDIP?

HEXFET?TRANSISTORSP-CHANNELHEXDIP? 1-WATTTRATEDPOWERMOSFETsINA4-PIN,DUAL-IN-LINEPACKAGE FEATURES ■ForAutomaticInsertion ■Compact,EndStackable ■FastSwitching ■LowDriveCurrent ■EasyParalleled ■ExcellentTemperatureStability ■P-ChannelVersatility

IRF

International Rectifier

IRFD9010

PowerMOSFET

DESCRIPTION TheHVMDIPtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHVMDIPdesignachievesverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?ForAutomatic

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9010

P-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFR9010

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR9010

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9010

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancheratings ?Surface-mount(IRFR9010,SiHFR9010) ?Straightlead(IRFU9010,SiHFU9010) ?Simpledriverequirements ?Easeofparalleling ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCR

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9010PBF

PowerMOSFET

DESCRIPTION ThepowerMOSFETtechnologyisthekeytoVishay’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

VishayVishay Siliconix

威世科技威世科技半導體

晶體管資料

  • 型號:

    F9010...9022

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N/P

  • 性質(zhì):

    通用型 (Uni)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.2A

  • 最大工作頻率:

    300MHZ

  • 引腳數(shù):

    3

  • 可代換的型號:

  • 最大耗散功率:

    0.5W

  • 放大倍數(shù):

    β=900

  • 圖片代號:

    A-20

  • vtest:

    50

  • htest:

    300000000

  • atest:

    0.2

  • wtest:

    0.5

詳細參數(shù)

  • 型號:

    F9010

  • 制造商:

    Thomas & Betts

  • 功能描述:

    NON-INS FERRULE 16, 1.5 MM2, LG .70

  • 功能描述:

    Ferrules Terminal 16AWG

供應商型號品牌批號封裝庫存備注價格
GENERALMICROWAVEISRAEL
24+
30000
房間原裝現(xiàn)貨特價熱賣,有單詳談
詢價
IMTX
2020+
SOT-23
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
IMTX
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IMTX
SOT-23
294
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
IMTX
2023+環(huán)?,F(xiàn)貨
SOT-23
18000
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
IMTX
23+
NA/
3544
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
IMTX
23+
SOT-23
294
全新原裝正品現(xiàn)貨,支持訂貨
詢價
IMTX
2223+
SOT-23
26800
只做原裝正品假一賠十為客戶做到零風險
詢價
IMTX
20+
SOT-23
294
進口原裝現(xiàn)貨,假一賠十
詢價
IMTX
25+
SOT-23
294
原裝正品,假一罰十!
詢價
更多F9010供應商 更新時間2025-4-6 22:10:00