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IRF530

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導體

IRF530

N??hannelEnhancement??odeSiliconGate

TMOSE?FET.?PowerFieldEffectTransistor N?ChannelEnhancement?ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain?to?sourcediodewithafastrecoverytime.Designedfo

ONSEMION Semiconductor

安森美半導體安森美半導體公司

IRF530

14.0A100VNCHANNELPOWERMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF530

14A,100V,0.160Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF530

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF530

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF530

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor

VishayVishay Siliconix

威世科技威世科技半導體

IRF530

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF530

TO-220-3LPlastic-EncapsulateMOSFETS

FEATURES LowRDS(on) VGSRatedat ± 20V SiliconGateforFastSwitchingSpeed Rugged LowDriveRequirements DESCRITION Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersupplies,UPS,ACandDC motorcontrols,relayandsolenoiddrivers.

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

IRF530A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

詳細參數(shù)

  • 型號:

    FP-530

  • 制造商:

    SIRENZA

  • 制造商全稱:

    SIRENZA

  • 功能描述:

    Wideband RF/Pulse Transformer 1-750 MHz/1-100 MHz

供應商型號品牌批號封裝庫存備注價格
2017+
SMD
1585
只做原裝正品假一賠十!
詢價
QORVO
24+
SMD
5000
QORVO“芯達集團”專營品牌原裝正品假一罰十
詢價
HOLLINGSWORTH
382
全新原裝 貨期兩周
詢價
RFMD
23+
N/A
7560
原廠原裝
詢價
RFMD
23+
PlasticFlatpack
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
RFMD
原廠封裝
3688
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
TI
16+
TSSOP-48
8000
原裝現(xiàn)貨請來電咨詢
詢價
TI/BB
24+
TSSOP-48
5645
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
TI/BB
19+
面談
6000
TSSOP36
詢價
TI
2020+
TSSOP38
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
更多FP-530供應商 更新時間2025-4-7 14:48:00