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FP9133

RF AMPLIFIER MODEL

APITECH

API Technologies Corp

G9133

3.3V1ALowDropoutRegulatorwithDisable

GeneralDescription TheG9133positive3.3Vvoltageregulatorfeaturestheabilitytosource1Aofoutputcurrent.Thedropoutvoltageis0.5Vat1Aoutputcurrent.Thetypicalquiescentcurrentis5mA.Furthermore,thequiescentcurrentissmallerwhentheregulatorisinthedropoutmode(VIN

GMTGlobal Mixed-mode Technology Inc

致新科技

ICS9133X

32kHzMotherboardFrequencyGenerator

GeneralDescription TheICS9133Xisdesignedtogenerateclocksforall286,386,486,PentiumandRISC-basedmotherboards,includinglaptopsandnotebookcomputers.Theonlyexternalcomponentsrequiredarea32.768kHzcrystalanddecouplingcapacitors. Features ?Single32.768kHzcrystalgen

ICST

Integrated Circuit Systems

IRF9133

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9133

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9133

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF9133

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9133

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9133

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9133

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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NS
23+
LLP-28
8890
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22+
LLP
5000
進(jìn)口原裝!現(xiàn)貨庫(kù)存
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NS
24+
LLP
2987
絕對(duì)全新原裝現(xiàn)貨供應(yīng)!
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NSC
08+
LLP
11300
優(yōu)勢(shì)
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NS
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NS
23+
QFN-28
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NS
23+
QFN-28
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
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NS
22+
QFN
8000
原裝正品支持實(shí)單
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NS
05+
QFN-28
110
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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LLP-28
68500
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更多FP9133供應(yīng)商 更新時(shí)間2025-4-6 14:02:00