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IRF3415L

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3415L

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415S

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3415S

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415SPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRLPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3415STRR

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP3415

PowerMOSFET(Vdss=150V,Rds(on)=0.042ohm,Id=43A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow

IRF

International Rectifier

供應商型號品牌批號封裝庫存備注價格
原裝
20+
SOT23
32970
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
國產(chǎn)
22+
SOT23
12000
只做原裝、原廠優(yōu)勢渠道、假一賠十
 詢價
24+
N/A
75000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
國產(chǎn)
12+
SOT23
2000
只有原裝正品,老板發(fā)話合適就出
 詢價
FUXINSEMI(富芯微)
2447
SOT-23
105000
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
JG-SEMI
23+
SOT23
111121
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FUXINSEMI富芯微
23+
SOT-23
22820
原裝正品，支持實單
 詢價
FORSEMI
23+
SOT23-5
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FORSEMI
23+
SOT23-5
28000
原裝正品
 詢價
FORSEMI
23+
SOT23-5
20000
原裝正品 歡迎咨詢
 詢價
更多FS3415供應商 更新時間2025-4-15 18:37:00

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