FSL234R3中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
FSL234R3 |
| 功能描述 | 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| 文件大小 |
46.03 Kbytes |
| 頁(yè)面數(shù)量 |
8 頁(yè) |
| 生產(chǎn)廠商 | Intersil Corporation |
| 企業(yè)簡(jiǎn)稱(chēng) |
Intersil |
| 中文名稱(chēng) | Intersil Corporation官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-3-16 14:26:00 |
| 人工找貨 | FSL234R3價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
FSL234R3規(guī)格書(shū)詳情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet.
Features
? 4A, 250V, rDS(ON) = 0.610?
? Total Dose
?? - Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
?? - Safe Operating Area Curve for Single Event Effects
?? - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
?? - Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
?? - Typically Survives 2E12 if Current Limited to IDM
? Photo Current
?? - 4.0nA Per-RAD(Si)/s Typically
? Neutron
?? - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
?? - Usable to 1E14 Neutrons/cm2
產(chǎn)品屬性
- 型號(hào)：
FSL234R3
- 制造商：
INTERSIL
- 制造商全稱(chēng)：
Intersil Corporation
- 功能描述：
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
24+ |
SMD |
12000 |
原廠/代理渠道價(jià)格優(yōu)勢(shì) |
詢價(jià) | ||
FAIRCHILD/仙童 |
22+ |
SOP-8 |
25000 |
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詢價(jià) | ||
Fairich |
2020+ |
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80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
FAIRCHILD |
23+ |
SOP-7 |
12800 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IR |
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TO-263 |
2000 |
專(zhuān)業(yè)優(yōu)勢(shì)供應(yīng) |
詢價(jià) | ||
FAIRCHILD |
21+ |
SOP-7 |
102 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
ON現(xiàn)貨 |
2022+ |
8-SMD(7個(gè)接腳),鷗翼 |
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TOKO |
24+ |
QFP |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
ON Semiconductor |
2021+ |
SOIC |
57500 |
科研單位合格供應(yīng)商!現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
GOOD-ARK/蘇州固锝 |
23+ |
100000 |
原廠授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) |
