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G10N10AS

Marking:G10N10A;Package:SOP-8;DC/DC Primary Side Switch

Description TheG10N10ASusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●DC/DCPrimarySideSwitch ●Telecom/Server ●SynchronousRectification

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G10N60A

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G10N65F

Marking:G10N65;Package:TO-220F;N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lActivepowerfactorcorrection l

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G10N80F

Marking:G10N80;Package:TO-220F;N-Channel Enhancement Mode Power MOSFET

Description ThisadvancedMOSFETfamilyhasoptimizedon-state resistance,andalsoprovidessuperiorswitching performanceandhigheravalancheenergystrength.This devicefamilyissuitableforhighefficiencyswitchmode powersupplies. Application lLEDpowersupplies lCellPhoneC

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G10P03

Marking:G10P03;Package:DFN3X3-8L;P-Channel Enhancement Mode Power MOSFET

Description TheG10P03usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G10T60

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features: ?VerylowVCE(sat)1.5V(typ.) ?MaximumJunctionTemperature175°C ?Shortcircuitwithstandtime5?s ?Designedfor: -VariableSpeedDriveforwashingmachinesandairconditioners -inductioncooking -UninterruptedPowerSupply ?TRENCHSTOP?andFieldstoptechnologyfor60

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

G100001

All Dimension In MM

E-SWITCH

E-switch

G10000GW1

10 segment light bar

ETCList of Unclassifed Manufacturers

未分類制造商

G10000GW2

10 segment light bar

ETCList of Unclassifed Manufacturers

未分類制造商

G10000GW3

10 segment light bar

ETCList of Unclassifed Manufacturers

未分類制造商

晶體管資料

  • 型號(hào):

    G10

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+R

  • 性質(zhì):

    表面帖裝型 (SMD)_差分放大器射極輸出 (Dual)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    50V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    5

  • 可代換的型號(hào):

    FMG10A,

  • 最大耗散功率:

  • 放大倍數(shù):

  • 圖片代號(hào):

    H-21

  • vtest:

    50

  • htest:

    999900

  • atest:

    0.05

  • wtest:

    0

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    G10

  • 制造商:

    XP Power

  • 類別:

    電源 - 板安裝 > 直流轉(zhuǎn)換器

  • 系列:

    XP EMCO - G (1.5W)

  • 包裝:

    管件

  • 類型:

    高電壓 - 隔離模塊

  • 電壓 - 輸入(最小值):

    0.7V

  • 電壓 - 輸入(最大值):

    12V

  • 電壓 - 輸出 1:

    1000V

  • 電流 - 輸出(最大值):

    1.5mA

  • 應(yīng)用:

    ITE(商業(yè))

  • 特性:

    比例輸出

  • 工作溫度:

    -10°C ~ 60°C

  • 安裝類型:

    通孔

  • 封裝/外殼:

    4-DIP 模塊

  • 大小 / 尺寸:

    1.50" 長(zhǎng) x 1.50" 寬 x 0.63" 高(38.1mm x 38.1mm

  • 描述:

    DC DC CONVERTER 1000V 1.5W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
XP Power
24+
N/A
12000
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理
詢價(jià)
ADI/亞德諾
QFN
6698
詢價(jià)
NA
2023+環(huán)?,F(xiàn)貨
TSSOP8
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
詢價(jià)
NA
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
NA
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
XP
24+
4-DIP
2191
專注XP品牌原裝正品代理分銷,認(rèn)準(zhǔn)水星電子
詢價(jià)
NULL
04+/05+
SOT-23
202
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
GMT
13+
TO-252
3549
原裝分銷
詢價(jià)
FUJIEIECTRIC
23+
SOP08
9516
詢價(jià)
FSC
2016+
TO-220
3000
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
詢價(jià)
更多G10供應(yīng)商 更新時(shí)間2025-4-3 16:52:00