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IRF430

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs(on)athighvoltage ?Improvedinductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapactiance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablitiy ?TO-3package(Highvol

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF430

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF430

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRF430

TRANSISTORSN-CHANNEL(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

IRF430

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

N-ChannelPowerMOSFETs,4.5A,450V/500V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF430

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFE430

HEXFETTRANSISTOR

500Volt,1.50?,HEXFET Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.TheLCCprovidesdesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRectifierhasengineeredtheLCCpa

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    GP430

  • 制造商：

    Mallory Sonalert Products Inc

  • 功能描述：

    Cap Ceramic 30pF 1000V SL 10%(6 X 4.5mm) Radial 6.4mm 85°C

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CDE
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
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Bel
22+
NA
80
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N/A
BGA28
2250
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N/A
18+
BGA28
2250
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DIODES/美臺
1936+
SO8
6852
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DIODES/美臺
23+
SO8
12000
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DIODES/美臺
22+
SO8
30000
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Diodes Incorporated
23+/24+
原廠封裝
8600
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GAMMACOMM
2015+
SOT23-5
29898
專業(yè)代理DC-DC升壓IC,型號齊全,公司優(yōu)勢產(chǎn)品
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GAMMACOMM
24+
SOT23-5
33000
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更多GP430供應(yīng)商 更新時間2025-4-6 15:00:00

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