首頁(yè) >GS-830T>規(guī)格書列表

零件編號(hào)下載 訂購(gòu)功能描述/絲印制造商 上傳企業(yè)LOGO

IRC830PBF

Dynamicdv/dfRating

IRF

International Rectifier

IRF830

N-CHANNEL500V-1.35ohm-4.5A-TO-220PowerMESH]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=1.35? ■EXTREMELYHIGHdv/dtCAPABILITY ■1

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF830

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF830

N-CHANNELENHANCEMENTMODE

PowerFieldEffectTransistor N?ChannelEnhancementMode ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn?Losses,SpecifiedatElevated Temperature ?Rugged—SOAisPowerDissipationLimited ?Source?to?DrainDiodeCharacterizedforUsewithInductiveLoads

TRSYS

Transys Electronics

IRF830

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF830

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF830

POWERMOSFET

ETCList of Unclassifed Manufacturers

未分類制造商

IRF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

IRF830

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    GS-830T

  • 制造商:

    Global Specialties

  • 類別:

    原型開發(fā),制造品 > 無焊試驗(yàn)板

  • 系列:

    GS

  • 包裝:

    散裝

  • 類型:

    端子條(無框架)

  • 大小 / 尺寸:

    6.50" 長(zhǎng) x 2.13" 寬(165.1mm x 54.0mm)

  • 描述:

    BREADBRD TERM STRIP 6.50X2.13\

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GlobalSpecialties
5
全新原裝 貨期兩周
詢價(jià)
Global Specialties
2022+
1
全新原裝 貨期兩周
詢價(jià)
B&K
22+
NA
88
加我QQ或微信咨詢更多詳細(xì)信息,
詢價(jià)
GS
22+
DIP
5000
進(jìn)口原裝!現(xiàn)貨庫(kù)存
詢價(jià)
GS
22+
PDIP
12245
現(xiàn)貨,原廠原裝假一罰十!
詢價(jià)
NS
24+
DIP
17500
原裝現(xiàn)貨 自家?guī)齑?歡迎來電
詢價(jià)
GS
23+
原廠封裝
11888
專做原裝正品,假一罰百!
詢價(jià)
GSI
23+
QFN
130000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
GSI Technology
2022+
原廠原包裝
8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
GSITECHNOLOGY
2022+
72
只做原裝,價(jià)格優(yōu)惠,長(zhǎng)期供貨。
詢價(jià)
更多GS-830T供應(yīng)商 更新時(shí)間2025-4-25 16:05:00