74HC2G66DP-Q100

Marking：H66；Package：SOT505-2；Dual single-pole single-throw analog switch

1.Generaldescription The74HC2G66-Q100;74HCT2G66-Q100isadualsinglepole,single-throwanalogswitch.Each switchhastwoinput/outputterminals(nYandnZ)andadigitalenableinput(nE).WhennEisLOW, theanalogswitchisturnedoff.Inputsincludeclampdiodesthatenabletheuseof

74HC2G66GT

Marking：H66；Package：SOT833-1；Dual single-pole single-throw analog switch

1.Generaldescription The74HC2G66;74HCT2G66isadualsinglepole,single-throwanalogswitch.Eachswitchhas twoinput/outputterminals(nYandnZ)andadigitalenableinput(nE).WhennEisLOW,theanalog switchisturnedoff.Inputsincludeclampdiodes.Thisenablestheuseofcurrent

AD8012ARMZ

Marking：H6A；Package：MSOP；Dual 350 MHz Low Power Amplifier

FEATURES LowPower 1.7mA/AmplifierSupplyCurrent FullySpecifiedfor
5Vand+5VSupplies HighOutputCurrent,125mA HighSpeed 350MHz,–3dBBandwidth(G=+1) 150MHz,–3dBBandwidth(G=+2) 2,250V/sSlewRate 20nsSettlingTimeto0.1% LowDistortion –72dBcWorstHarm

AD8012ARMZ-REEL7

Marking：H6A；Package：MSOP；Dual 350 MHz Low Power Amplifier

FEATURES LowPower 1.7mA/AmplifierSupplyCurrent FullySpecifiedfor
5Vand+5VSupplies HighOutputCurrent,125mA HighSpeed 350MHz,–3dBBandwidth(G=+1) 150MHz,–3dBBandwidth(G=+2) 2,250V/sSlewRate 20nsSettlingTimeto0.1% LowDistortion –72dBcWorstHarm

DMPH6050SK3-TP

Marking：H6050S；Package：SOT-252；P-Channel Enhancement Mode MOSFET

Features *Vos=-60V,lo=-16A Ros52mQ@Vos=-10V(Typ)

DMPH6050SSDQ-13

Marking：H6050SD；Package：SO-8；175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Ratedto+175°C–idealforhighambienttemperature environments 100UnclampedInductiveSwitching–ensuresmorereliable androbustendapplication LowRDS(ON)–minimisespowerlosses LowQg–minimisesswitchinglosses TotallyLead-Free&FullyRoHSCompliant(Notes1&2) Ha

DMTH6010LPDWQ-13

Marking：H6010LDW；Package：PowerDI5060-8/SWP；60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?Enginemanagementsystems ?Bodycontrolelectronics ?DC-DCconverters FeaturesandBenefits ?

DMTH6016LFVW-13

Marking：H6W；Package：PowerDI3333-8；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON)),yetmaintainsuperiorswitchingperformance,makingit idealforhigh-efficiencypowermanagementapplications. Applications ?Backlighting ?PowerManagementFunctions ?DC-DCConverters

DMTH6016LFVW-7

Marking：H6W；Package：PowerDI3333-8；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON)),yetmaintainsuperiorswitchingperformance,makingit idealforhigh-efficiencypowermanagementapplications. Applications ?Backlighting ?PowerManagementFunctions ?DC-DCConverters

DMTH6016LFVWQ-13

Marking：H6W；Package：PowerDI3333-8；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof Automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?Backlighting ?PowerManagementFunctions ?DC-DCConverters FeaturesandBenefits ?Ratedto+1