DMTH6016LFVWQ-7

Marking：H6W；Package：PowerDI3333-8；60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof Automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: ?Backlighting ?PowerManagementFunctions ?DC-DCConverters FeaturesandBenefits ?Ratedto+1

HMC661LC4B

Marking：H661；ULTRA-WIDEBAND 4 GS/s TRACK-AND-HOLD AMPLIFIER DC - 18 GHz

Features 18GHzInputbandwidth(1Vp-pFullScale) 4GS/sMaximumSamplingRate 68dBSFDR(4GHz/0.5Vp-pInput,CLK=1GS/s) 57dBSFDR(4GHz/1Vp-pInput,CLK=1GS/s) Direct-CoupledI/O Ultra-CleanOutputWaveforms,MinimalGlitching >60dBHoldModeFeedthroughRejection 1.05

HMC678LC3C

Marking：H678；13 Gbps, 2:1 SELECTOR w/ PROGRAMMABLE OUTPUT VOLTAGE

Features SupportsHighDataRates:upto13Gbps Single-endedinputs Differential&Single-endedoutputs FastRiseandFallTimes:19/18ps LowPowerConsumption:250mWtyp. ProgrammableDifferential OutputVoltageSwing:600-1200mV PropagationDelay:125ps SingleSupply:-3.3V 16

IKWH60N67PR7

Marking：H60EPR7；Package：PG-TO247-3-U04；TRENCHSTOP? IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Features ?VCE=670V ?IC=60A ?Pin-to-pincreepagedistance>4.8mm ?Pin-to-pinclearancedistance>3.4mm ?OptimizedmonolithicdiodeforPFCapplications ?ImprovedEMIbehaviorwithlowerdv/dt ?VerylowVCEsat=1.4V(typ.)at25°C ?Stabletemperaturebehavior ?Lowtempe

PSMNR60-25YLH

Marking：H6025L；Package：SOT669；N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

1.Generaldescription LogiclevelgatedriveN-channelenhancementmodeMOSFETinLFPAK56packageoptimized forlowRDSon.LowIDSSleakageevenwhenhot,highefficiencyandhighcurrent.Ratedto300A, optimizedforDCloadswitchandhot-swapapplications. 2.Featuresandbenefits ?100

74HC1G66GV-Q100

Marking：H66；Package：SC-74A；Single-pole single-throw analog switch

74HC2G66DC-Q100

Marking：H66；Package：VSSOP8；Dual single-pole single-throw analog switch

74HC2G66DP-Q100

Marking：H66；Package：TSSOP8；Dual single-pole single-throw analog switch

EMH60

Marking：H60；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)

EMH61

Marking：H61；Package：EMT6；Complex Digital Transistors (Bias Resistor Built-in Transistors)