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IRF123

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    HB123D

  • 制造商：

    HUASHAN

  • 制造商全稱：

    HUASHAN

  • 功能描述：

    NPN SILICON TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Eaton
22+
NA
168
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
POWERSTOR/EATON
23+
DIP
15777
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
PANASONIC
2016+
DIP
24562
全新原裝,假一罰十,公司主營繼電器!
 詢價(jià)
松下
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價(jià)
PANASONIC/松下
2018+
DIP
23216
假一罰十/本公司只做原裝正品
 詢價(jià)
PANASONIC
20+
DIP通信繼電器
2890
只做原裝現(xiàn)貨繼電器
 詢價(jià)
松下
2023+環(huán)?，F(xiàn)貨
專業(yè)繼電器
6800
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)
 詢價(jià)
松下
23+
DIP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
松下
23+
DIP
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
TI
24+
SSOP14
22
詢價(jià)
更多HB123D供應(yīng)商 更新時(shí)間2025-4-12 10:08:00

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