HEF4720V中文資料飛利浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書
HEF4720V規(guī)格書詳情
DESCRIPTION
The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.
The use of LOCMOS gives the added advantage of very low stand-by power. The circuits can be directly interfaced with standard bipolar devices (TTL) without using special interface circuits. The memory operates from a single power supply.
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---|---|---|---|---|---|---|---|
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23+ |
NA/ |
75 |
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SOP16 |
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詢價 | |||
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22+ |
CDIP |
12245 |
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詢價 | ||
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24+ |
2560 |
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22+ |
CDIP |
8000 |
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589220 |
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23+ |
CDIP |
12300 |
詢價 | |||
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23+ |
SOP |
4500 |
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詢價 |