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IRF640

18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRF640

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF640areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. FEATURES ●RDS(ON)=0.180?@VGS=10V ●Ultralowgatecharge(63nCmax.) ●

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF640

N-ChannelPowerMosfets

18A,200V,0.180Ohm,N-ChannelPowerMosfets TheseareN-Channelenhansementmodesilicongatepowerfieldeffecttransistors.TheyareadvancepowerMOSFETsdesigned,tested,andguaranteedtowithstancdaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF640

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF640

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    HI640AA

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    P-CORD, HI-IMPACT,6,BK,RJ45-RJ45,40'

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HISILICON/海思
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HISILICON/海思
25+
BGA
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
HISILON/海思
24+
NA/
500
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
HISILICON/海思
24+
BGA
60000
全新原裝現(xiàn)貨
 詢價(jià)
HISILICON/海思
23+
BGA
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
HISILICON
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
HISILICON
21+
BGA
1709
詢價(jià)
HISILICON
24+
BGA
9600
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單!
 詢價(jià)
HISILICON
21+
BGA
6000
全新原裝 公司現(xiàn)貨
 詢價(jià)
HISILCON
2022+
BGA
1500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
更多HI640AA供應(yīng)商 更新時(shí)間2025-4-24 11:00:00

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