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IRFR9014

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-5.1A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9014PBF

HEXFET?PowerMOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9014PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014TRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9014TRL

HEXFETPowerMOSFET

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL

IRF

International Rectifier

IRFR9014TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR9014TRLA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

晶體管資料

  • 型號(hào):

    HIT9014

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    通用型 (Uni)_低噪放大 (ra)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    30V

  • 最大電流允許值:

    0.05A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.3W

  • 放大倍數(shù):

  • 圖片代號(hào):

    A-20

  • vtest:

    30

  • htest:

    999900

  • atest:

    0.05

  • wtest:

    0.3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
HITACHISEMIC
05+
原廠原裝
9270
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
RENESAS/瑞薩
24+
65200
詢價(jià)
HITACHI/日立
23+
TO92
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
Renesas
21+
標(biāo)準(zhǔn)封裝
114
進(jìn)口原裝,訂貨渠道!
詢價(jià)
HITACHI/日立
24+
NA/
3750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
RENESAS/瑞薩
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
RENESAS/瑞薩
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價(jià)
HITACHI
24+
TO-92
5000
全現(xiàn)原裝公司現(xiàn)貨
詢價(jià)
HITACHI
23+24
TO-92
29850
原裝正品優(yōu)勢渠道價(jià)格合理.可開13%增值稅發(fā)票
詢價(jià)
HIT
14+
TO92L
2500
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
更多HIT9014供應(yīng)商 更新時(shí)間2025-4-26 10:32:00