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IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD123PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    HPR123

  • 功能描述：

    DC/DC轉(zhuǎn)換器 750mW SGL 24V +/-15V

  • RoHS：

    否

  • 制造商：

    Murata

  • 輸入電壓范圍：

    3.6 V to 5.5 V

  • 輸出端數(shù)量：

    1 輸出電壓（通道

  • 1）：

    3.3 V 輸出電流（通道

  • 1）：

    600 mA 輸出電壓（通道

  • 2）：

    輸出電流（通道

  • 安裝風(fēng)格：

    SMD/SMT

供應(yīng)商型號品牌批號封裝庫存備注價格
POWER
23+
22800
原盒原標(biāo),正品現(xiàn)貨,誠信經(jīng)營,假一罰十
 詢價
BB
24+
A
40
詢價
C&D
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
C&D
24+
65200
詢價
CANDD
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價
Murata power
99+
MODULE-5
99
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
power
ROHS
13352
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
BB
23+
A
58059
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
C&D
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
Murata power
2023+
MODULE-5
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價
更多HPR123供應(yīng)商 更新時間2025-4-12 10:16:00

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