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IRF640

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10A(Max.)@VDS=200V ■LowerRDS(ON):0.144?(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.144Ω(TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?LowRDS(on)=0.180Ω(?TYP) ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?RuggedGateOxideTechnology

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF640FP

N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF640FP

IRF640FP18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640L

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    HT640

  • 制造商:

    HOLTEK

  • 制造商全稱(chēng):

    Holtek Semiconductor Inc

  • 功能描述:

    3(18) Series of Encoders

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HOLTEK
24+/25+
468
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢(xún)價(jià)
HOLTEK/合泰
24+
65230
詢(xún)價(jià)
HOLTEK/合泰
23+
SOP24
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
HT
23+
DIP
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷(xiāo)售
詢(xún)價(jià)
HOLTEK/合泰
23+
SOP24
10000
原廠(chǎng)授權(quán)一級(jí)代理,專(zhuān)業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢(xún)價(jià)
HOLTEK/合泰
23+
NA/
1402
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢(xún)價(jià)
HOLTEK/合泰
23+
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
HOLTEK/合泰
23+
7300
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
詢(xún)價(jià)
HOLTEK/合泰
24+
SOP
990000
明嘉萊只做原裝正品現(xiàn)貨
詢(xún)價(jià)
HARTING/浩亭
24+
SOT23-6
60000
全新原裝現(xiàn)貨
詢(xún)價(jià)
更多HT640供應(yīng)商 更新時(shí)間2025-4-2 9:10:00