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IRF640

N-ChannelEnhancementModePOWERMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRON

Weitron Technology

IRF640

POWERTRMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

SUNTAC

Suntac Electronic Corp.

IRF640

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

IRF640

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF640

18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=200V,ID=18A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

IRF640

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedFastSwitching

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF640areN-channelenhancementmodesilicongatepowerfieldeffecttransistors. Theyaredesigned,testedandguaranteedtowithstandlevelofenergyinbreakdownavalanchemadeofoperation. FEATURES ●RDS(ON)=0.180?@VGS=10V ●Ultralowgatecharge(63nCmax.) ●

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF640

N-ChannelPowerMosfets

18A,200V,0.180Ohm,N-ChannelPowerMosfets TheseareN-Channelenhansementmodesilicongatepowerfieldeffecttransistors.TheyareadvancepowerMOSFETsdesigned,tested,andguaranteedtowithstancdaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF640

SEMICONDUCTORS

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詳細(xì)參數(shù)

  • 型號(hào)：

    HT640

  • 制造商：

    HOLTEK

  • 制造商全稱：

    Holtek Semiconductor Inc

  • 功能描述：

    3(18) Series of Encoders

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HOLTEK
24+/25+
468
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
HOLTEK/合泰
24+
65230
詢價(jià)
HOLTEK/合泰
23+
SOP24
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
HT
23+
DIP
3200
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
 詢價(jià)
HOLTEK/合泰
23+
SOP24
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
HOLTEK/合泰
23+
NA/
1402
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
HOLTEK/合泰
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HOLTEK/合泰
23+
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HOLTEK/合泰
24+
SOP
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
HARTING/浩亭
24+
SOT23-6
60000
全新原裝現(xiàn)貨
 詢價(jià)
更多HT640供應(yīng)商 更新時(shí)間2025-4-5 14:30:00

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