| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
SurfaceMount(IRFR2405)StraightLead(IRFU2405)AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
SurfaceMount(IRFR2405) | IRF International Rectifier | IRF | ||
55VN-ChannelMOSFET Description AdvancedProcessTechnology Dynamicdv/dtRating FastSwitching FullyAvalancheRated Lead-Free VDS(V)=55V ID=34A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司 | UMW | ||
AdvancedProcessTechnology Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=60V,ID=50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
SurfaceMount(IRFR2405) Description TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Surf | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.016ohm,Id=56A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
SurfaceMount(IRFR2405) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
XP |
23+ |
DIP |
52628 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
XP |
2021+ |
DIP |
11000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
LAIRD |
20+ |
射頻元件 |
155 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
SMCCorporation |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
SMC Corporation |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 |
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